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FQD1N60CTM FQD1N60 (MOSFET N-CH 600V 1A DPAK)

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Key attributes

Industry-specific attributes

Model Number
FQD1N60CTM
Type
MOSFET , FQD1N60CTM
Brand Name
Original Brand
Package Type
Hermetic bag

Other attributes

Description
..
Place of Origin
Peru
Package / Case
TO-261-4, TO-261AA, SOT-223
D/C
New
Application
Electronic Components
Supplier Type
Retailer
Media Available
datasheet, Photo
Brand
electronic component
Current - Collector (Ic) (Max)
3.5A
Voltage - Collector Emitter Breakdown (Max)
300V
Vce Saturation (Max) @ Ib, Ic
345mV @ 600mA, 3.5A
Current - Collector Cutoff (Max)
50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA, 10V
Power - Max
3W
Frequency - Transition
80MHz
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
FET Feature
Standard
Applications
circuit board
unit price
subject to saleman's quotation
Our Produce
FQD1N60CTM
product
FQD1N60CTM

Packaging and delivery

Packaging Details
Carton packing
Port
Shenzhen

Supply Ability

Supply Ability
10000 Piece/Pieces per Month

Lead time

Quantity (pieces)1 - 10 > 10
Lead time (days)2To be negotiated

Product descriptions from the supplier

Minimum order quantity: 10 pieces
$0.14 - $0.28

Quantity

Shipping

Shipping solutions for the selected quantity are currently unavailable
Item subtotal (0 variations 0 items)
$0.00
Shipping total
$0.00
Subtotal
$0.00

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